Description |
Value |
frequency
range in MHz |
1,544 ~
77,760 |
frequency
stability at -10° ~ +60°C in ppm |
±10 ~ ±50 |
frequency
stability at -10° ~ +70°C in ppm |
±20 ~ ±50 |
frequency
stability at -40° ~ +85°C in ppm |
±30 ~ ±50 |
storage
temperature range in °C |
-40 ~+85 |
operating
temperature range in °C |
-10 ~ +60 |
operating
temperature range in °C |
-40 ~ +85 |
symmetry at
½ Vdd level in % |
50 ±5 |
rise &
fall time (max.) 20% ~ 80% Vdd level in ns |
5 |
start up
time max. in ms |
10 |
output
level VOH of Vdd min. in % |
90 |
output
level VOL of Vdd min. in % |
10 |
input
voltage (Vdd) in V ± tolerance in % |
3,3 ±5 |
input
current (no load) at 1,544 ~ 20,0 MHz in mA max. |
10 |
input
current (no load) at 20,1 ~ 40,0 MHz in mA max. |
15 |
input
current (no load) at 40,1 ~ 77,760 MHz in mA max. |
25 |
output load
at CMOS in pF |
15 |
control
voltage (Vc) in V |
0 ~3,3 |
pulling
range min. in ppm |
±10 ~ ±150 |
frequency
linearity in % max. |
±15 |
period
jitter: absolut in ps max. |
±100 |
period
jitter: one sigma in ps max. |
±10 |
tristate
control |
#2: open =
#4: output |
tristate
control |
#2: +2,20V
min. = #4: output |
tristate
control |
#2: +0,80V
max. = #4: high impedance |
size l/w/h
in mm |
7,0/5,0/1,70 |
lead-free |
yes |